...
机译:差分横截面测量,用于〜(nat)Si上氘核的弹性散射,用于弹性反向散射
Natl Tech Univ Athens, Dept Phys, Zografou Campus, Athens 15780, Greece|NCSR Demokritos, Inst Nucl Phys, Tandem Accelerator Lab, GR-15310 Athens, Greece;
Univ Ioannina, Dept Phys, GR-45110 Ioannina, Greece;
NCSR Demokritos, Inst Nucl Phys, Tandem Accelerator Lab, GR-15310 Athens, Greece;
Natl Tech Univ Athens, Dept Phys, Zografou Campus, Athens 15780, Greece;
NCSR Demokritos, Inst Nucl Phys, Tandem Accelerator Lab, GR-15310 Athens, Greece;
Aristotle Univ Thessaloniki, Dept Chem, GR-54124 Thessaloniki, Greece;
Univ Ioannina, Dept Phys, GR-45110 Ioannina, Greece;
Natl Tech Univ Athens, Dept Phys, Zografou Campus, Athens 15780, Greece|NCSR Demokritos, Inst Nucl Phys, Tandem Accelerator Lab, GR-15310 Athens, Greece;
Natl Tech Univ Athens, Dept Phys, Zografou Campus, Athens 15780, Greece;
EBS; Silicon; Differential cross section; Benchmarking;
机译:弹性反向散射目的〜(NAT)Si氘丝弹性散射的差分横截面测量
机译:〜(nat)N上氘核弹性散射的微分截面测量,适用于EBS
机译:2.0 GeV dp弹性散射中的微分截面测量和氘核矢量分析能力
机译:用单烯酸kα辐射测量弹性和非弹性散射横截面的测量
机译:碳的质子总反应截面的能量依赖性的测量以及质子-碳弹性散射的光学模型分析
机译:CH3NH3PbI3和CD3NH3PbI3中有机阳离子旋转的活化能:准弹性中子散射测量和包括核量子效应在内的第一性原理分析
机译:2.0 GeV dp弹性散射中的微分截面测量和氘核矢量分析能力
机译:质量 - 质子弹性散射的高精度绝对差分截面测量在491.9,575.5,641.6,728.2和793.0 meV。