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Development of radiation hard sensors for very high luminosity colliders―CERN-RD50 project

机译:开发用于高亮度对撞机的辐射硬传感器CERN-RD50项目

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The requirements at the Large Hadron Collider (LHC) at CERN have pushed today's silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade of the LHC to a 10 times increased luminosity of 10~(35) cm~(-2) s~(-1) will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10~(16)cm~(-2) and a possible reduced bunch-crossing interval of ≈10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible. The newly formed CERN-RD50 project is aiming to provide detector technologies, which are able to operate safely and efficiently in such an environment. This article describes the approaches and first results of RD50 to develop ultra radiation hard sensors by optimizing existing methods and evaluating new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions as well as investigating the possibility to use semiconductor materials other than silicon.
机译:CERN的大型强子对撞机(LHC)的要求已将当今的硅跟踪探测器推向了当前技术的最前沿。未来的极高光度对撞机或LHC可能升级到10〜(35)cm〜(-2)s〜(-1)的10倍的增加的光度,将需要具有显着改善的性能的半导体探测器。考虑到超过10〜(16)cm〜(-2)的快速强子的预期总通量以及可能减少的≈​​10ns的束穿间隔,探测器必须具有超强的辐射强度,提供快速有效的电荷收集能力并应越薄越好。新成立的CERN-RD50项目旨在提供能够在这样的环境中安全高效地运行的探测器技术。本文介绍了RD50的方法和初步结果,该方法通过优化现有方法并评估设计硅块状材料,探测器结构和探测器操作条件的新方法以及研究使用其他半导体材料的可能性来开发超辐射硬传感器。比硅。

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