...
【24h】

Hard X-ray and γ-ray spectroscopy at high temperatures using a COTS SiC photodiode

机译:使用COTS SiC光电二极管的高温下硬X射线和γ射线光谱

获取原文
获取原文并翻译 | 示例

摘要

A commercial-off-the-shelf (COTS) silicon carbide (4H-SiC) UV photodiode was electrically characterized and investigated as a low-cost spectroscopic photon counting detector of X-rays and γ-rays. The detector was coupled to a custom-built low-noise charge-sensitive preamplifier, and illuminated by~(55)Fe and~(109)Cd radioisotope X-ray sources and an241 Am radioisotope c-ray source, thus providing photon energies from 5.9 keV to 59.5 keV. The detector and preamplifier were operated uncooled at temperatures between 20 °C and 100 °C. The energy resolution (full width at half maximum, FWHM) of the spectrometer was found to be 1.66 keV ± 0.15 keV at 5.9 keV and 22.16 keV, and 1.83 keV ± 0.15 keV at 59.5 keV when operated at 20 °C. At a temperature of 100 °C, the FWHM were 2.69 ± 0.25 keV, 2.65 keV± 0.25 keV, and 3.30 keV ± 0.30 keV, at the same energies. Shaping time noise analysis found dielectric noise to be the dominant noise source, except when long amplifier shaping times were used at high temperatures when white parallel noise dominated. Noise associated with incomplete charge collection was found to be negligible at energies up to 22.16 keV and at temperatures ≤60 °C; but incomplete charge collection noise could not be discounted when the spectrometer was operated at higher temperature (80 °C) and at higher energy (59.5 keV). Although the detector was thin (and thus inefficient at high photon energies) the low cost and commercial availability of the SiC device make it an attractive prospect for use in cost-sensitive applications such as university-led CubeSat missions.
机译:将商业离心碳(4H-SiC)UV光电二极管电表征和研究作为X射线和γ射线的低成本光谱光子计数器。探测器与定制的低噪声电荷敏感前置放大器耦合,并由〜(55)Fe和〜(109)CD放射性同位素X射线源和AN241 AM放射性同位素C射线源照射,从而提供光子能量5.9 kev至59.5 kev。检测器和前置放大器在20℃和100℃之间的温度下加工。光谱仪的能量分辨率(半最大,FWHM)的能量分辨率(半最大,FWHM)为1.66kev±0.15keV,在5.9keV和22.16keV,22.16keV,1.83kev±0.15kev,在20°C时操作。在100°C的温度下,FWHM为2.69±0.25keV,2.65keV±0.25keV,3.30kev±0.30kev,处于相同的能量。成形时间噪声分析发现介电噪声是主导噪声源,除非当白色平行噪声主导时在高温下使用长放大器整形时间。发现与不完全电荷收集相关的噪声在高达22.16kev和温度≤60°C时可忽略不计;但是当光谱仪在较高温度(80°C)和更高的能量(59.5keV)下运行时,不能折扣不完全电荷收集噪声。虽然检测器很薄(并且在高光子能量下效率低下),但SIC器件的低成本和商业可用性使其成为有吸引力的前景,以便在大学 - LED立方体特派团等成本敏感的应用中使用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号