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Pixelated CdZnTe detector based on Topmetal-Ⅱα readout chip

机译:基于Topmetal-Ⅱα读出芯片的像素化CdZnTe探测器

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摘要

In order to solve the leakage current saturation of Topmetal-II- and to maintain its low noise, Topmetal-IIa has been designed. The new chip has the same Rolling-Shutter module as Topmetal-II-. It contains a charge-collection electrode and a metal layer surrounding it, called guard ring. This new design contains three different sections. Section A has the same structure as Topmetal-II-, in that the electrode is exposed and guard ring is covered by insulating layer. Section B has both electrode and guard ring exposed. Section C has guard ring exposed but electrode covered by insulating layer. Preliminary experiments show that if coupled with CdZnTe detector, Section C of the Topmetal-IIa chip is capable of solving the leakage current saturation. Meanwhile, the electrode receives induced signal. Moreover, the charge induction efficiency is influenced by several parameters, such as thickness of adhesive epoxy resin, collecting electrode size, etc. Thus, the optimization of parameters for induction efficiency is studied by simulations. According to the simulation results, it can be concluded that thinner epoxy resin thickness and bigger anode size contribute to higher induction efficiency.
机译:为了解决Topmetal-II-的泄漏电流饱和并保持其低噪声,已经设计了Topmetal-IIa。新芯片具有与Topmetal-II-相同的Rolling-Shutter模块。它包含一个电荷收集电极和一个围绕它的金属层,称为保护环。此新设计包含三个不同的部分。 A部分与Topmetal-II-具有相同的结构,其中电极暴露在外,保护环被绝缘层覆盖。 B部分的电极和保护环都暴露在外。 C部分的保护环暴露在外,但电极被绝缘层覆盖。初步实验表明,如果与CdZnTe检测器配合使用,Topmetal-IIa芯片的C部分能够解决漏电流饱和问题。同时,电极接收感应信号。此外,电荷感应效率受几个参数的影响,例如粘性环氧树脂的厚度,收集电极的尺寸等。因此,通过仿真研究了感应效率的参数优化。根据仿真结果,可以得出结论,环氧树脂厚度越薄,阳极尺寸越大,感应效率越高。

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  • 作者单位

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

    Ctr China Normal Univ, Key Lab Quark & Lepton Phys MOE, PLAC, Wuhan 430079, Hubei, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    Topmetal; Pixel; Low noise readout chip; CdZnTe; Leakage current; Induced signal simulation;

    机译:Topmetal;Pixel;低噪声读出芯片;CdZnTe;漏电流;感应信号仿真;

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