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Secondary discharge studies in single- and multi-GEM structures

机译:单GEM和多GEM结构的二次排放研究

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摘要

Secondary discharges, which consist of the breakdown of a gap near a GEM foil upon a primary discharge across that GEM, are studied in this work.Their main characteristics are the occurrence a few 10 mu s after the primary, the relatively sharp onset at moderate electric fields across the gap, the absence of increased fields in the system, and their occurrence under both field directions.They can be mitigated using series resistors in the high-voltage connection to the GEM electrode facing towards an anode. The electric field at which the onset of secondary discharges occurs indeed increases with increasing resistance. Discharge propagation from GEM to GEM in a multi-GEM system affects the occurrence probability of secondary discharges in the gaps between neighbouring GEMs.Furthermore, evidence of charges flowing through the gap after the primary discharge are reported. Such currents may or may not lead to a secondary discharge. A characteristic charge, of the order of 10(10) electrons, has been measured as the threshold for a primary discharge to be followed by a secondary discharge, and this number slightly depends on the gas composition. A mechanism involving the heating of the cathode surface as trigger for secondary discharges is proposed.
机译:在这项工作中,研究了二次放电,该二次放电包括在一次GEM箔上的一次放电时GEM箔附近的间隙破裂,它们的主要特征是一次放电后约10 s的发生时间,在中等温度下相对较尖的发作跨过间隙的电场,系统中不存在增加的电场以及在两个电场方向上均会发生电场。可以使用串联电阻将GEM电极面对阳极的高压连接中的电场缓解。确实,随着电阻的增加,发生二次放电的电场确实增加了。放电在多GEM系统中从GEM传播到GEM会影响相邻GEM之间间隙中二次放电的发生概率,此外,据报道,一次放电后有电荷流过间隙。这样的电流可能会或可能不会导致二次放电。已经测量了10(10)个电子数量级的特征电荷,作为一次放电之后要进行二次放电的阈值,该数字在某种程度上取决于气体成分。提出了一种机制,该机制涉及加热阴极表面作为二次放电的触发。

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  • 作者单位

    GSI Helmholtzzentrum Schwerionenforsch GmbH, Planckstr 1, D-64291 Darmstadt, Germany|Heidelberg Univ, Phys Inst, D-69120 Heidelberg, Germany;

    GSI Helmholtzzentrum Schwerionenforsch GmbH, Planckstr 1, D-64291 Darmstadt, Germany;

    Tech Uni Munchen, Phys Dept E62, James Franck Str 1, D-85748 Garching, Germany|Tech Univ Munich, Excellence Cluster Universe, Boltzmannstr 2, D-85748 Garching, Germany;

    GSI Helmholtzzentrum Schwerionenforsch GmbH, Planckstr 1, D-64291 Darmstadt, Germany|Heidelberg Univ, Phys Inst, D-69120 Heidelberg, Germany;

    Natl Res Nucl Univ MEPhI, Moscow, Russia;

    GSI Helmholtzzentrum Schwerionenforsch GmbH, Planckstr 1, D-64291 Darmstadt, Germany|Heidelberg Univ, Phys Inst, D-69120 Heidelberg, Germany;

    Heidelberg Univ, Phys Inst, D-69120 Heidelberg, Germany;

    Tech Uni Munchen, Phys Dept E62, James Franck Str 1, D-85748 Garching, Germany;

    Pakistan Inst Nucl Sci & Technol PINSTECH, Islamabad, Pakistan;

    Tech Uni Munchen, Phys Dept E62, James Franck Str 1, D-85748 Garching, Germany;

    Tech Uni Munchen, Phys Dept E62, James Franck Str 1, D-85748 Garching, Germany;

    GSI Helmholtzzentrum Schwerionenforsch GmbH, Planckstr 1, D-64291 Darmstadt, Germany|Heidelberg Univ, Phys Inst, D-69120 Heidelberg, Germany;

    Tech Uni Munchen, Phys Dept E62, James Franck Str 1, D-85748 Garching, Germany|Tech Univ Munich, Excellence Cluster Universe, Boltzmannstr 2, D-85748 Garching, Germany;

    Goethe Univ, Inst Kernphys, Max von Laue Str 1, D-60438 Frankfurt, Germany;

    Comenius Univ, Fac Math Phys & Informat, Bratislava, Slovakia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GEM; Discharge; Secondary discharge; Decoupling resistor; Onset field; Characteristic charge;

    机译:创业板;放电;二次放电;去耦电阻器;起始场;特性充电;

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