Electricals

摘要

Scientists at the Chinese Academy of Sciences' Institute of Microelectronics (IME) have successfully fabricated a zinc oxide (ZnO) nanorod field-effect transistor (FET), the first nano device of its kind in China.rnZnO is a wide bandgap semiconductor and an important multifunctional material. The ZnO nano materials, such as nanowires, nanorods, nanobands and nanorings, attract intense worldwide attention for their unique optical, semiconducting and piezoelectric properties. At present, Chinese scientists working in this field have mainly focused their research on material growth and diode development.rnProfessor Zhang Haiying and her research team from IME came up with a unique 'bottom-up' method for designing and developingrnnano devices.