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Faster, smaller and lower cost

机译:更快,更小,成本更低

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摘要

The demanding requirements of broadband infrastructure applications using xdsl, wireless and optical fibre technologies, along with the growth in high performance multimedia information systems, is putting pressure on developers to produce ever more complex system on chip (SoC) solutions. As oems seek to expand the performance and capabilities offered by portable, battery powered devices, there is also a growing need for advanced SoC solutions in these designs. This means developers must continually seek out faster asic technologies that offer higher gate densities whilst conserving board space and driving down power consumption. And all of this in an environment where time to market pressures and the need to deliver ahead of the competition are squeezing the time available for development and prototyping. The rapid evolution in the asic technology available to SoC developers can be seen by con- sidering Toshiba's asic roadmap. In 1997, for example, the company launched its TC240 family, based on the 0.25μm CMOS-1 process. Asics built around the TC240 featured a core power supply voltage of 2.5V and could achieve a gate density of around 36,000 gates/mm~2. Two years later, the 0.14μm CMOS-2 process allowed the launch of Toshiba's TC260 technology, with a gate density in excess of 125,000 gates/mm~2 and a core power supply voltage of 1.5V. The TC280 family, which followed in 2001, was based on the 0.13μm CMOS-3 process. With a gate length of 0.11μm, this increased possible gate density to more than 200,000 gates/mm~2. Most recently, Toshiba announced the TC300 asic technology.
机译:使用xdsl,无线和光纤技术的宽带基础设施应用的苛刻要求,以及高性能多媒体信息系统的增长,正向开发人员施加压力,要求他们开发越来越复杂的片上系统(SoC)解决方案。随着oems寻求扩展便携式电池供电设备提供的性能和功能,在这些设计中对高级SoC解决方案的需求也日益增长。这意味着开发人员必须不断寻求更快的ASIC技术,以提供更高的栅极密度,同时又要节省电路板空间并降低功耗。所有这些都是在上市时间压力和在竞争中领先交付的需求压缩了可用于开发和原型制作的时间的环境中。通过考虑东芝的ASIC路线图,可以看到SoC开发人员可以利用的ASIC技术的快速发展。例如,1997年,该公司推出了基于0.25μmCMOS-1工艺的TC240系列。围绕TC240构建的Asics具有2.5V的核心电源电压,并且可以实现约36,000栅极/ mm〜2的栅极密度。两年后,0.14μmCMOS-2工艺允许东芝推出TC260技术,其栅极密度超过125,000栅极/ mm〜2,核心电源电压为1.5V。随后于2001年推出的TC280系列基于0.13μmCMOS-3工艺。栅极长度为0.11μm时,可能的栅极密度增加到200,000栅极/ mm〜2以上。最近,东芝宣布了TC300 asic技术。

著录项

  • 来源
    《New Electronics》 |2003年第8期|p.40-41|共2页
  • 作者

    Juergen Kottmann;

  • 作者单位

    Toshiba Electronics Europe's asic & SoC business unit;

  • 收录信息 美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 基础理论;
  • 关键词

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