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Measurements of deformations and strains of a SI-epoxy-FR4 structure during thermal testing

机译:在热测试过程中测量SI-环氧-FR4结构的形变和应变

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Deformations and strains of a Si-epoxy-FR4 structure were evaluated during thermal testing using high sensitivity, real-time Moire interferometry. The specimen studied was a sandwich structure consisting of a silicon chip, epoxy underfill and FR4 substrate. The deformations and strains of the FR4-underfill and silicon-underfill interfaces of the specimen under certain thermal loading were examined. The results show that the shear strain increases significantly along the interfaces, with the maximum shear strain occurring at the intersection of the specimen edge and the silicon-underfill interface. The shear strain at the silicon-underfill interface experienced a 2 percent increase after heated for two hours at 100 deg C, but the shear strain at the FR4-underfill interface showed a 12 percent increase. This is an indication that the creep effect is more dominant in the FR4-underfill interface. The interfaces of the specimen experience partial strain recovery after one hour of the holding time at 20 deg C.
机译:使用高灵敏度实时莫尔干涉仪在热测试过程中评估了Si-环氧-FR4结构的变形和应变。研究的样品是由硅芯片,环氧树脂底部填充胶和FR4基板组成的三明治结构。研究了在一定热负荷下样品的FR4底部填充和硅底部填充界面的变形和应变。结果表明,剪切应变沿界面显着增加,最大剪切应变发生在试样边缘与硅-底部填充界面的交点处。在100摄氏度下加热两个小时后,硅-底部填充界面的剪切应变增加了2%,而FR4-底部填充界面的剪切应变显示增加了12%。这表明在FR4底部填充界面中蠕变效应更为明显。在20摄氏度的保持时间一小时后,样品的界面经历了部分应变恢复。

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