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Fluctuating stripes at the onset of the pseudogap in the high-T_c superconductor Bi_2Sr_2CaCu_2O_(8+x)

机译:高T_c超导体Bi_2Sr_2CaCu_2O_(8 + x)中伪间隙开始时的起伏条纹

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摘要

Doped Mott insulators have a strong propensity to form patterns of holes and spins often referred to as stripes. In copper oxides, doping also gives rise to the pseudogap state, which can be transformed into a high-temperature superconducting state with sufficient doping or by reducing the temperature. A long-standing issue has been the interplay between the pseudogap, which is generic to all hole-doped copper oxide superconductors, and stripes, whose static form occurs in only one family of copper oxides over a narrow range of the phase diagram. Here we report observations of the spatial reorganization of electronic states with the onset of the pseudogap state in the high-temperature superconductor Bi_2Sr_2CaCu_2O_(8+x), using spectroscopic mapping with a scanning tunnelling microscope. We find that the onset of the pseudogap phase coincides with the appearance of electronic patterns that have the predicted characteristics of fluctuating stripes. As expected, the stripe patterns are strongest when the hole concentration in the CuO_2 planes is close to 1/8 (per copper atom). Although they demonstrate that the fluctuating stripes emerge with the onset of the pseudogap state and occur over a large part of the phase diagram, our experiments indicate that the stripes are a consequence of pseudogap behaviour rather than its cause.
机译:掺杂的莫特绝缘子很容易形成通常称为条纹的孔和自旋图案。在氧化铜中,掺杂还会产生伪能隙状态,可以通过充分掺杂或通过降低温度将其转变为高温超导状态。一个长期存在的问题是伪间隙和条带之间的相互影响,伪间隙对于所有掺杂空穴的氧化铜超导体都是通用的,而条带的静态形式仅出现在相图狭窄范围内的一个族氧化铜中。在这里,我们使用扫描隧道显微镜通过光谱映射报告了高温超导体Bi_2Sr_2CaCu_2O_(8 + x)中电子态的空间重组以及伪间隙态的出现。我们发现伪间隙相的出现与具有波动条纹预测特征的电子图案的出现相吻合。不出所料,当CuO_2平面中的空穴浓度接近1/8(每个铜原子)时,条纹图案最强。尽管他们证明波动的条纹随伪间隙状态的出现而出现并出现在相图的很大一部分上,但我们的实验表明,条纹是伪间隙行为的结果而不是其原因。

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  • 来源
    《Nature》 |2010年第7324期|p.677-680|共4页
  • 作者单位

    Joseph Henry Laboratories and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;

    rnJoseph Henry Laboratories and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;

    rnJoseph Henry Laboratories and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;

    rnJoseph Henry Laboratories and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;

    rnCentral Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan;

    rnCondensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA;

    rnCondensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA;

    rnCondensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA;

    rnJoseph Henry Laboratories and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 02:55:22

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