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Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal

机译:多晶SNSE具有比单晶更优异的热电人物

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摘要

Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimension-less figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2-2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m~(-1) K~(-1) at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.
机译:热电材料从废热产生电能,转换效率由尺寸的优点,ZT的尺寸控制。发现单晶锡硒化物(SNSE)在913K下表现出大约2.2-2.6的高ZT,但相同的化合物的更实用和可展开的多晶版本遭受大量较差的整体ZT,从而挫败了经济高效的前景 - 免费热电。差的多晶批量性能归因于覆盖SNSE粉末表面的氧化锡的痕量,这增加了导热率,降低了导电性,从而减少了ZT。在这里,我们报告了具有试剂的空穴掺杂的SNSE多晶样品,仔细纯化和除去的氧化锡,其Zt在783k下表现出大约3.1的Zt。其晶格导热率大约为0.07W m〜(-1)k〜(-1 )在783 k,低于单晶。在多晶样品中的超高热电性能的途径是从SNSE晶粒表面正常去除有害的导热氧化物。这些结果可以从这种高性能材料开辟高性能实用热电量的时代。

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  • 来源
    《Nature Materials》 |2021年第10期|1378-1384|共7页
  • 作者单位

    School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National University Seoul Republic of Korea;

    School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National University Seoul Republic of Korea;

    Institute of Physics (IA) RWTH Aachen University Aachen Germany;

    School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National University Seoul Republic of Korea Center for Correlated Electron Systems Institute for Basic Science (IBS) Seoul Republic of Korea;

    Department of Chemistry Northwestern University Evanston IL USA;

    School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National University Seoul Republic of Korea Center for Correlated Electron Systems Institute for Basic Science (IBS) Seoul Republic of Korea;

    School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National University Seoul Republic of Korea;

    Chemical Data-Driven Research Center Korea Research Institute of Chemical Technology Daejeon Republic of Korea;

    Department of Mechanical Engineering Northwestern University Evanston IL USA;

    Advanced Analysis Center Korea Institute of Science and Technology Seoul Republic of Korea;

    Institute of Physics (IA) RWTH Aachen University Aachen Germany;

    Chemical Data-Driven Research Center Korea Research Institute of Chemical Technology Daejeon Republic of Korea;

    Chemical Data-Driven Research Center Korea Research Institute of Chemical Technology Daejeon Republic of Korea;

    National Center for Inter-University Research Facilities Seoul National University Seoul Republic of Korea;

    Institute of Physics (IA) RWTH Aachen University Aachen Germany;

    Department of Materials Science and Engineering Northwestern University Evanston IL USA;

    Department of Chemistry Northwestern University Evanston IL USA Department of Materials Science and Engineering Northwestern University Evanston IL USA;

    School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National University Seoul Republic of Korea Center for Correlated Electron Systems Institute for Basic Science (IBS) Seoul Republic of Korea;

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