The controlled organization of inorganic materials into multi-dimensional addressable arrays is the foundation for logic and memory devices, as well as other nonlinear optical and sensing devices. Many of these devices are currently fabricated using lithographic patterning processes that have progressively developed toward greater integration densities and smaller sizes. At submicron scales, however, conventional lithographic processes are approaching their practical and theoretical limits. At scales below 100 nm, ion and electron beam lithography becomes prohibitively expensive and time consuming, and more importantly, at these scales, quantum effects fundamentally change the properties of devices.
展开▼
