PASSIVE MINIATURIZATION: SI INTEGRATED PASSIVE DEVICES FOR RF AND MICROWAVE APPLICATIONS

摘要

With well-developed, low cost RF passive manufacturing technology (thick oxide Si substrate and copper/benzocyclobutene (Cu/BCB) multi-layer passive process technologies), various kinds of high performance RF integrated passive devices (IPD) have been fabricated on a 6" Si wafer for RF and microwave applications, and have achieved dramatic cost and size reductions. The fabricated devices are a low pass/high pass antenna diplexer, a low pass filter with harmonic resonance, a bandpass type diplexer for a VCO loop and a 2.4 GHz wireless LAN balun. To the authors' knowledge, they offer the smallest size and highest performance for devices of this type built on silicon. The size of the wafer-level, packaged, RF IPD is 1 to 1.5 mm~2. This RF passive integration technique will permit the 40 percent functional size reduction for handheld phones and wireless terminals that has been pursued until now.