A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor

摘要

A K-band monolithic microwave integrated circuit (MMIC) transmit and receive (T/R) single pole double throw (SPDT) switch with low insertion loss, high isolation and ultrahigh output power is demonstrated using 0.15-μm Gallium Arsenide (GaAs) technology. A shunt field effect transistor (FET) configuration is used to provide low insertion loss and high isolation while the stacked-FET is employed to improve power handling capability. The novel GaAs switch exhibits a minimum measured insertion loss of 1.4 dB and less than 2.5 dB from 22 GHz to 26 GHz as well as 44 dB isolation. The measured input 1-dB power compression point (P1 dB) exceeds 4 W.