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首页> 外文期刊>IEEE microwave and wireless components letters >An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth
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An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth

机译:具有多八度带宽的有源双向SiGe DPDT开关

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摘要

This letter proposes a wideband active double-pole double-throw (DPDT) switch for wideband phased array antennas, which realizes multi-octave bandwidth with positive gain and 4-way switching operation using a bi-directional distributed amplifier technique. The measured gain is 2.0–6.0 dB and the input and output return losses are better than 9 dB from 2–22 GHz. The isolation is over 15 dB and the measured input P1dB is greater than 9.1 dBm and the output P1dB is greater than 7.8 dBm from 2–22 GHz. The chip size is , including pads. The switch consumes 10 mA from a 2.5 V supply. Almost identical RF performance is achieved in each of the 4-way switching operations due to a symmetric circuit topology and careful layout. To the authors' knowledge, this is the first demonstration of the active DPDT switch configuration.
机译:这封信提出了一种用于宽带相控阵天线的宽带有源双刀双掷(DPDT)开关,该开关利用双向分布式放大器技术以正增益实现多倍频程带宽,并实现4向开关操作。测得的增益为2.0–6.0 dB,在2–22 GHz时,输入和输出回波损耗优于9 dB。在2–22 GHz范围内,隔离度超过15 dB,测量的输入P1dB大于9.1 dBm,输出P1dB大于7.8 dBm。芯片尺寸为,包括焊盘。开关从2.5 V电源消耗10 mA电流。由于对称的电路拓扑结构和精心的布局,在每种4路开关操作中几乎都能获得相同的RF性能。据作者所知,这是有源DPDT开关配置的首次演示。

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