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首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >A Low-Loss Compact 60-GHz Phase Shifter in 65-nm CMOS
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A Low-Loss Compact 60-GHz Phase Shifter in 65-nm CMOS

机译:采用65nm CMOS的低损耗紧凑型60GHz移相器

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摘要

This paper presents a 60-GHz low-loss compact 4-b phase shifter in a 65-nm CMOS. It is based on a 1-b high-pass/low-pass structure and a 3-b switched-filter structure, and employs fully custom-designed capacitors with a high quality factor for low insertion loss. The phase shifter with custom-designed capacitors reduces an insertion loss by 2.6 dB at 60 GHz. The average insertion loss is 8.1 dB at 60 GHz, and the return loss is better than 10.6 dB over a range of 57–66 GHz. The measured 16-output state of the fabricated phase shifter has a phase resolution of 22.5° with an rms phase error less than 5.5° over the 57–66 GHz range. The fabricated phase shifter has a compact core size of 0.42 mm times0.22 mm. To the best of our knowledge, this phase shifter achieves the lowest insertion loss and the smallest core area of all the published 60-GHz 360° -coverage passive CMOS phase shifters.
机译:本文提出了一种在65nm CMOS中的60GHz低损耗紧凑型4-b移相器。它基于1-b高通/低通结构和3-b开关滤波器结构,并采用完全定制设计的电容器,具有高品质因数,可降低插入损耗。带有定制电容器的移相器在60 GHz时可将插入损耗降低2.6 dB。在60 GHz时,平均插入损耗为8.1 dB,在57-66 GHz范围内,回波损耗优于10.6 dB。在57-66 GHz范围内,所制造的移相器的16输出状态的相位分辨率为22.5°,均方根相位误差小于5.5°。所制造的移相器具有0.42毫米乘以0.22毫米的紧凑型芯尺寸。据我们所知,该移相器在所有已发布的60 GHz 360°覆盖无源CMOS相移器中实现了最低的插入损耗和最小的核心面积。

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