A new compact model for monolithic transformers in silicon-based RFICs

摘要

A new compact model for monolithic transformers on silicon substrates is presented. The new lumped-element equivalent circuit model employs transformer loops to represent skin and proximity effects including eddy current loss in the windings of the transformer. In addition to the self-resistances and self-inductances of the windings, the effects of the frequency-dependent mutual resistance and mutual inductance are included in the model. The new compact model has been applied to a stacked transformer on a 10-/spl Omega//spl middot/cm CMOS substrate. The extracted circuit model shows very good agreement with data obtained by full-wave electromagnetic simulation and measurement over the frequency range of 0.1-10GHz.