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首页> 外文期刊>IEEE microwave and wireless components letters >Suppression of Second and Third Harmonics Using $lambda/$4 Low-Impedance Substrate IntegratedWaveguide Bias Line in Power Amplifier
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Suppression of Second and Third Harmonics Using $lambda/$4 Low-Impedance Substrate IntegratedWaveguide Bias Line in Power Amplifier

机译:使用$ lambda / $ 4低阻抗衬底集成波导偏置线在功率放大器中抑制第二和第三谐波

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摘要

In this letter, a low-impedance substrate integrated waveguide (SIW) bias line is proposed to suppress second and third harmonics in power amplifier. Such a bias line consists of a $lambda/$4 low-impedance microstrip line and a shorted SIW that can operate as a radio frequency block and suppress any harmonic signals from entering the dc source. Since the frequency of the second harmonic components is lower than the inherent cutoff frequency of the SIW, second harmonic components are blocked. At the same time, third harmonic components are shorted by the shorted SIW. Measured results show that second and third harmonic components can be reduced by 25 dB and 13 dB, respectively, compared to the outcomes using conventional $lambda/$ 4 high-impedance microstrip bias line. Also, both 1 dB compression point and power added efficiency are improved slightly.
机译:在这封信中,提出了一种低阻抗衬底集成波导(SIW)偏置线,以抑制功率放大器中的二次谐波和三次谐波。这样的偏置线由一个λ/ 4的低阻抗微带线和一个短路的SIW组成,SIW可以用作射频模块并抑制任何谐波信号进入直流电源。由于二次谐波分量的频率低于SIW的固有截止频率,因此二次谐波分量被阻塞。同时,三次谐波分量通过短路的SIW短路。测量结果表明,与使用传统的λ/ 4的高阻抗微带偏置线的结果相比,二次谐波分量和三次谐波分量可以分别降低25 dB和13 dB。而且,1 dB压缩点和功率附加效率都得到了轻微改善。

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