A 10–35 GHz Low Power Bulk-DrivenMixer Using 0.13 $mu$m CMOS Process

摘要

A 10–35 GHz doubly balanced mixer using a 0.13-$mu$m CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of $-{hbox{1}} pm$ 2dB from 10 to 35GHz of radio frequency (RF) with a fixed intermediate frequency (IF) of 100MHz. The measured local oscillation (LO) to IF and RF–IF isolations are better than 30 dB. The chip area of the mixer is 0.6$,times,$0.4mm${2}$. The total power consumption included output buffer is only 6mW.