A 220 GHz (G-Band) Microstrip MMIC Single-Ended Resistive Mixer

摘要

This letter presents the design and characterization of a 220 GHz microstrip monolithic microwave integrated circuit single-ended resistive mixer in a 0.1 $mu {rm m}$ GaAs mHEMT technology. A conversion loss as low as 8.7 dB is obtained, limited by the available local oscillator (LO) power (1.5 dBm) in the measurement setup. The radio frequency (RF) bandwidth is also limited by the measurement setup, but the mixer demonstrates a flat response over the measured 200 to 220 GHz frequency range. Furthermore, measured intermediate frequency bandwidth, 1-dB input compression point, LO-to-RF isolation, and reflection coefficients are presented and discussed.