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57–67-GHz Highly Compact Bidirectional 3-Bit Phase Shifter in 28-nm CMOS

机译:采用28 nm CMOS的57–67 GHz高度紧凑的双向3位移相器

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This letter describes a highly compact, low-loss, high-bandwidth, bidirectional, passive 3-bit phase shifter (PS) implementation for 5G and WiGig applications at 57-67 GHz, fabricated in Taiwan Semiconductor Manufacturing Company 28-nm CMOS technology. First, a highly compact, differential quadrature hybrid coupler is used for the I/Q generation. Consuming only 0.006 mm2, it achieves 4.5-dB insertion loss (IL) with less than 1-dB amplitude imbalance, and 6° I/Q phase imbalance, for the entire frequency band. The hybrid coupler is followed by a novel compact transistors switching matrix to create the 3-bit, bidirectional, 360° PS, which provides impedance matching for all states. It consumes the smallest ever reported PS chip area of only 0.007 mm2with state-of-the-art results of the maximum rms phase and gain errors of 6.3° and 0.94 dB, respectively. The measured IL was 10.8 dB between 57 and 67 GHz.
机译:这封信描述了台湾半导体制造公司采用28-nm CMOS技术制造的,用于57-67 GHz的5G和WiGig应用的高度紧凑,低损耗,高带宽,双向,无源3位移相器(PS)实现。首先,高度紧凑的差分正交混合耦合器用于I / Q生成。仅消耗0.006 mm n 2 n,它在整个频带内实现4.5dB的插入损耗(IL),幅度不平衡小于1dB,I / Q相位不平衡为6°。混合耦合器之后是新颖的紧凑型晶体管开关矩阵,可创建3位双向360°PS,从而为所有状态提供阻抗匹配。它消耗的报告PS芯片面积最小,仅为0.007 mm n 2,最新的结果是最大均方根相位和增益误差分别为6.3°和0.94 dB。在57至67 GHz之间,测得的IL为10.8 dB。

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