Parasitic-Element Compensation Based on Factorization Method for Microwave Inverse Class-F/Class-F Amplifiers

摘要

A novel parasitic-element compensation design method with a combination of factorization and coefficient comparison for microwave inverse class-F/class-F amplifiers is proposed. This novel method is applicable to all circuit topologies, including $L-C$ parallel and series resonance circuits, and ladder circuits with arbitrary order of the higher harmonic frequencies. The validity of the proposed method has been checked with a fabricated 1.9 GHz inverse class-F GaN-HEMT power amplifier, considering harmonic frequencies up to the fourth order. A drain efficiency of 77% and power added efficiency of 70% were obtained at 1.88 GHz.