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Global Simulation of CdZnTe Crystal Growth by Detached Solidification Method

机译:分离凝固法生长CdZnTe晶体的全局模拟

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摘要

Detached solidification represents perhaps the most exciting recent development for the growth of bulk, single-crystal materials from the molten phase. This method combines appealing characteristics of both the classical Bridgman and Czochralski methods, which can improve the crystal quality dramatically. In this paper, the global simulations of CdZnTe detached solidification are conducted with gap widths of 0, 0.5 and 1 mm. The temperature distribution, the stream function distribution and the shape of the melt/crystal interface are displayed and analyzed in microgravity and on earth.
机译:分离的固化可能代表了熔融相中块状单晶材料生长的最激动人心的最新进展。此方法结合了经典Bridgman方法和Czochralski方法的吸引人的特性,可以显着提高晶体质量。在本文中,对间隙为0、0.5和1 mm的CdZnTe分离凝固进行了整体模拟。在微重力和地面上显示并分析了温度分布,流函数分布和熔体/晶体界面的形状。

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