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Trimming process and temperature variation in second-order bandgap voltage reference circuits

机译:二阶带隙基准电压源电路的修整过程和温度变化

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摘要

This paper presents the design and experimental performance of a second-order bandgap voltage reference integrated circuit (IC). Experimentally observed nominal reference voltage at room temperature is 1.150 V with best temperature performance of 3 mV variation over - 40 to 120 ℃. A 5-bit resistor trimming is used to compensate the variation of reference voltage due to layout mismatch and process variation. A trimming methodology is described in this paper to optimize both the temperature performance and reduce the variation of the room temperature voltage over different samples. Even with best temperature performance trim-code, the absolute variation in reference voltage over 20 samples is 85 mV which is trimmed to ± 11 mV (1.3%) using the proposed trimming methodology. The second-order bandgap circuit is designed in a 0.5 μm BiCMOS process with less than 50 μA current consumption.
机译:本文介绍了二阶带隙基准电压集成电路(IC)的设计和实验性能。在室温下,实验观察到的标称参考电压为1.150 V,最佳温度性能在-40至120℃范围内变化3 mV。 5位电阻微调用于补偿由于布局不匹配和工艺变化而引起的参考电压变化。本文介绍了一种微调方法,以优化温度性能并减少不同样品上室温电压的变化。即使具有最佳的温度性能修整代码,在20个样本上基准电压的绝对变化也为85 mV,使用建议的修整方法将其修整为±11 mV(1.3%)。二阶带隙电路采用0.5μmBiCMOS工艺设计,电流消耗低于50μA。

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