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首页> 外文期刊>Microelectronics journal >A 0.3 V 8-bit 8.9 fJ/con.-step SAR ADC with sub-DAC merged switching for bio-sensors
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A 0.3 V 8-bit 8.9 fJ/con.-step SAR ADC with sub-DAC merged switching for bio-sensors

机译:具有用于生物传感器的子DAC合并开关的0.3 V 8位8.9 fJ / con.step SAR ADC

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摘要

An 8-bit 10 kS/s 0.3 V ultra-low power successive approximation register (SAR) analog-to-digital converter (ADC) is proposed. On account of the presented sub-DAC merged switching scheme reducing the switch energy by 98.4% compared with conventional switching architecture, the energy consumption of the SAR ADC is decreased drastically. Furthermore, a presented double-bootstrapped switch with leakage reduction technologies improves sampling linearity under 0.3 V. In addition, to relieve non-linearity, boost technique is introduced in digital-to-analog converter (DAC) driving switch. The proposed ADC has been fabricated in 180 nm 1.8 V CMOS process. The measurement results show that effective number of bits (ENOB) of the ADC is 7.21 bit at the Nyquist input frequency and 0.3 V supply voltage, achieving a figure-of-merit (FOM) of 8.9 fJ/conversion-step. The chip area is 0.084 mm(2).
机译:提出了一种8位10 kS / s 0.3 V超低功耗逐次逼近寄存器(SAR)模数转换器(ADC)。与传统的开关架构相比,由于本发明的子DAC合并开关方案将开关能量降低了98.4%,因此SAR ADC的能耗大大降低。此外,提出的具有漏泄抑制技术的双自举开关可改善0.3 V以下的采样线性度。此外,为缓解非线性,在数模转换器(DAC)驱动开关中引入了升压技术。拟议的ADC采用180 nm 1.8 V CMOS工艺制造。测量结果表明,在奈奎斯特输入频率和0.3 V电源电压下,ADC的有效位数(ENOB)为7.21位,品质因数(FOM)为8.9 fJ /转换步长。切屑面积为0.084 mm(2)。

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