Investigating defect inspection and sensitivity analysis for MoSi-based PSMs

摘要

Attenuated embedded phase shift masks (PSMs) based on molybdenum silicon (MoSi) are being increasingly used in semiconductor lithography to create high-density layers in memory chips. However, because MoSi's optical properties are significantly different from conventional chromium (Cr)-based materials, special MoSi defect inspection and characterization are necessary. Since the partial transmittance of PSMs may also affect inspection tool sensitivity, it is important to characterize the sensitivity of the tool as well.