Electrical properties of rapid hydrothermal synthesised Al-doped zinc oxide nanowires in flexible electronics

摘要

Al-doped ZnO nanowires with nanosheets were prepared on a ZnO seeded flexible substrate by rapid hydrothermal synthesis at 90u000b0;C. Specifically, the authors investigated the doping effect of Al into ZnO on structural, optical and electrical properties. The Al-doped ZnO nanowires exhibited high transmittance in the visible wavelengths. The optical bandgap of the Al-doped ZnO nanowires was tuned by varying the Al concentration, resulting in a decrease in the electrical resistance of the 2 at.% Al-doped ZnO nanowires. This subsequent decrease revealed that the Al3+ ions were successfully doped in the ZnO, with a minimal electrical resistance for 2 at.% Al-doped ZnO nanowires.