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首页> 外文期刊>Micro & Nano Letters, IET >Characterisation of SU-8 n-doping carbon nanotube-based electronic devices
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Characterisation of SU-8 n-doping carbon nanotube-based electronic devices

机译:SU-8 n 掺杂碳纳米管基电子器件的表征

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摘要

Triarylium–solphonium salt, the chemical component of the SU-8 photo resist, has been proved as an effective -doping source for graphene. In this reported work, a study has been made of the effects of SU-8 on single walled carbon nanotube networks. The results indicate that SU-8 behaves as an electrons donor and causes an upward shift in the Fermi level. The cross-linking property of the SU-8 resembles an efficient isolator from the oxygen of the ambient. This leads to ambient-stability of this doping technique. In addition, the doping technique shows negligible defects on the CNT surface and then higher transconductance is expected to be achieved. The temperature dependence of the Raman spectra of the CNT network observed a downshift in the -band with increasing temperature. Finally, since SU-8 is an e-beam sensitive resist as well as a photo resist, it was used to selectively dope CNTs within the substrate area.
机译:SU-8光刻胶的化学成分Triliumlium-phon盐已被证明是石墨烯的有效掺杂源。在这项报道的工作中,已经对SU-8对单壁碳纳米管网络的影响进行了研究。结果表明SU-8表现为电子供体,并引起费米能级的向上移动。 SU-8的交联特性类似于与环境氧气的有效隔离剂。这导致该掺杂技术的环境稳定性。另外,掺杂技术显示出在CNT表面上的缺陷可忽略不计,然后期望实现更高的跨导。碳纳米管网络的拉曼光谱对温度的依赖性随温度升高观察到-带的下降。最后,由于SU-8既是电子束敏感型抗蚀剂又是光致抗蚀剂,因此它用于在基材区域内选择性地掺杂CNT。

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