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首页> 外文期刊>Metallurgical and Materials Transactions A >Abnormal growth of TiB2 crystals during sintering of TiB2-Ni3(Al,Ti) cemented borides
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Abnormal growth of TiB2 crystals during sintering of TiB2-Ni3(Al,Ti) cemented borides

机译:TiB2 -Ni3 (Al,Ti)烧结硼化物烧结过程中TiB2 晶体的异常生长

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摘要

TiB2-Ni3(Al,Ti) cermets present both normal and abnormal growth of faceted titanium diboride (TiB2) grains during liquid-phase sintering. Abnormal grain growth (AGG) is preferentially found at high sintering temperatures in specimens processed from powder mixtures with a wide particle size distribution. The WC additions to the initial powder mixtures have proved efficient in reducing the number and size of these large TiB2 grains. However, the sinterability of these materials is dramatically reduced, which suggests that TiB2 AGG control is obtained by decreasing TiB2 dissolution kinetics in the liquid phase. On the other hand, an alternative method based on intensive powder milling not only reduces TiB2 AGG but also the porosity levels obtained by previous powder processing routes. TiB2 cermets produced by aggressive milling present a higher amount of alumina particles in the matrix after sintering, which, in addition, appear more homogeneously dispersed in the microstructure. The distortion produced by these particles on the facets of TiB2 growing grains suggests a possible dragging effect responsible for the AGG reduction found in these cermets. Moreover, aggressive milling removes large TiB2 particles from the powder mixtures, which could act as seeds for TiB2 uncontrolled growth. TiB2-Ni3(Al,Ti) cermets obtained by intensive milling combine hardness over 20 GPa with K IC of about 10 MPa √m, data clearly out of the range covered so far by other TiB2-based materials.
机译:TiB2 -Ni3 (Al,Ti)金属陶瓷在液相烧结过程中呈现出刻面的二硼化钛(TiB2 )晶粒的正常和异常生长。优先在高烧结温度下,从具有宽粒度分布的粉末混合物加工的样品中发现异常晶粒长大(AGG)。事实证明,在原始粉末混合物中加入WC可以有效减少这些大的TiB2 晶粒的数量和尺寸。然而,这些材料的可烧结性大大降低,这表明通过降低液相中TiB2 的溶解动力学可以获得TiB2 AGG的控制。另一方面,基于强化粉末研磨的替代方法不仅可以降低TiB2 AGG,而且可以降低以前的粉末加工路线所获得的孔隙度。积极研磨产生的TiB2 金属陶瓷在烧结后在基体中存在大量的氧化铝颗粒,此外,它们在微观结构中的分布更均匀。这些颗粒在生长的TiB2 的晶面上产生的变形表明,这些金属陶瓷中可能存在引起AGG降低的阻力效应。此外,积极研磨可从粉末混合物中去除较大的TiB2 颗粒,这可能是TiB2 不受控生长的种子。通过强化研磨获得的TiB2 -Ni3 (Al,Ti)金属陶瓷将20 GPa以上的硬度和约10 MPa√m的K IC 结合在一起,数据显然超出了迄今为止的范围其他基于TiB2 的材料。

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