Simulation of Growth Rate Variation of CVD-Mo Film along Axial Direction in Horizontal Tubular Reactor

摘要

In the authors' previous study, the Mo film was chemical-vapour-deposited on the inner wall of a horizontal tubular reactor, using MoCl_5 and H_2, as a mixture of reactive feed gas. Growth rate distributions along the axial direction of the reactor were obtained under different deposition conditions. In this study, the distribution curves were simulated by using a calculation model, which took the rates of mass trans- Fer, gas phase reaction and surface reaction into consideration. The reaction rate constants were estimated from the mass Balance calculation. The simulated growth rate distributions agreed with the experimental results and they were able to explain the ten- Dency of flat distribution at low P_H_2 and peak formation in the distribution curves at high P_H_2.