Comparative study of polymer based novel organic-inorganic hetero-junctions with n-GaN and AlGaN/GaN epi-structures

摘要

The present study reports the fabrication and characterization of organic-inorganic hetero-junctions based on π-conjugated polymers on n-GaN and Al_(0.24)Ga_(0.76)N/GaN epi-structures. The polymer contact properties were investigated with n-GaN and AlGaN/GaN epi-structures. The PNA/n-GaN and PNA/AlGaN/GaN samples exhibited better diode characteristics with low ideality factor values of 3.15 and 2.79, respectively in comparison to PANI based n-GaN and AlGaN/GaN diodes. Also a reasonably good Schottky barrier height was achieved with PNA polymer for n-GaN (0.52 eV) and AlGaN/GaN (0.70 eV) samples. Low reverse leakage current ～10~(12) A and 10~(-9) A at a reverse bias voltage of -10 V was observed for PNA/n-GaN and PNA/AlGaN/GaN samples, respectively. PNA is a promising candidate in comparison to PANI for it-conjugated polymer contact on n-GaN and AlGaN/GaN epitaxial hetero-structure. The studies also confirmed that the performance of the diode could be improved by using AlGaN/GaN inorganic structure than GaN.