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Intrinsic magnetism and thermoelectric applicability of novel halide perovskites Cs_2GeMnX_6 (X = Cl, Br): Route towards spintronics and energy harvesting technologies

机译:新型卤化物蠕动CS_2GEMNX_6(X = CL,BR)的内在磁性和热电适用性:朝着闪蒸的途径和能量收集技术

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摘要

Novel halides becomes a point of prestige due to their intriguing multi-dimensional applications. In this work, strict and highly accurate spin-polarized Density Functional Theory (DFT) combined with Boltzmann transport scheme has been applied to extract the properties of new class of Pb-free prototypical halide semiconductors Cs_2GeMnX_6 (X = Cl, Br). The structural composition of these alloys suitably prefers their cubic crystalline geometry not only at room temperature but at higher temperatures also. The electronic properties were executed by Pedrew-Burke and Ernzerhof (PBE-GGA) in addition with the strong on-site Hubbard-parameter (U) implemented on Mn-partially filled d states to designate the complete understanding regarding their electronic structures. The inclusion of two calculation schemes claims p-type indirect semiconducting band profiles with the enhancement of band gap follows the trend GGA < GGA + U. The semiconducting nature at different symmetric points with ultra-spin splitting results ferromagnetic magnetic character of 5μB leads to the promising route towards spintronics. Elastically and mechanically these alloys are characterized to show brittle/ductile capability. Conservative estimates of Seebeck coefficient gears its extending application stand in thermoelectric energy harvesting technologies. The compact overview on these FM halide perovskites can develop into other highly dynamic research fields with vast implications for high-performance spin optoelectronics, spintronics, thermoelectrics and topological devices.
机译:由于其有趣的多维应用,新型卤化物成为声望的点。在这项工作中,严格且高度精确的旋转偏振密度泛函理论(DFT)与Boltzmann运输方案相结合,提取了新类别的无铅原型卤化物半导体CS_2GEMNX_6(X = CL,BR)的特性。这些合金的结构组合物不仅在室温下更喜欢它们的立方晶几何形状,而是在较高温度下也是如此。电子特性通过Pedrew-Burke和Ernzerhof(PBE-GGA)执行,此外,在MN部分填充的D状态下实施的强大的现场Hubbard-参数(U)以指定有关其电子结构的完全理解。包含两个计算方案的索引P型间接半导体带分布随着带状隙的增强遵循趋势GGA

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