Investigations of porous InP properties by XRD, IR, USXES, XANES and PL techniques

摘要

The work is concerned with complex investigations of the layers of porous indium phosphide (por-lnP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy (USXES), spectroscopy of X-ray near-edge absorption fine structure XANES (X-ray absorption near-edge structure) and photoluminescence, obtained by anodic pulse electrochemical etching of single-crystalline plates of lnP(100) of n-type conductivity (n ～ 10~(18)). The data obtained as a result of this work demonstrated that the surface layers of por-lnP have cluster structure with the formation of InP quasi-molecules.