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首页> 外文期刊>Materials Science and Engineering >Investigation of magnetic interactions, electrical and magneto-transport properties in Ga-substituted La_(0.4)Bi_(0.6)MnO_3 perovskite manganites
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Investigation of magnetic interactions, electrical and magneto-transport properties in Ga-substituted La_(0.4)Bi_(0.6)MnO_3 perovskite manganites

机译:Ga取代的La_(0.4)Bi_(0.6)MnO_3钙钛矿锰矿中磁相互作用,电和磁输运性质的研究

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摘要

We report on magnetic, electrical and magneto-transport properties in La_(0.4)Bi_(0.6)Mn_(1-x)Ga_xO_3 (with x = 0.05 and x = 0.1) samples. The phase purity and microstructural analysis of the samples have been carried out using X-ray diffraction and scanning electron microscopy technique. From the magnetization data, the studied samples show paramagnetic to ferromagnetic transition followed with glassy behavior at low temperatures. Frequency dependent ac susceptibility measurements reveal dynamic fluctuations due to cooperative interactions between antiferromagnetic domain pinning effects giving rise to glassy behavior in the studied samples. Electrical resistivity measurements suggest semiconducting behavior for the studied samples in the measured temperature range (100-300 K). Our study reveals that resistivity data for T≤ (θ_D/2, the Debye temperature) follow power law and for T>θ_D/2 Shklovskii-Efros variable range hopping transport mechanism. The MR% vs. magnetic field has been studied to understand the simultaneous behavior of FM and insulating nature around T= 100 K existing in the samples.
机译:我们报告了La_(0.4)Bi_(0.6)Mn_(1-x)Ga_xO_3(x = 0.05和x = 0.1)样品中的磁,电和磁传输性质。样品的相纯度和显微结构分析已使用X射线衍射和扫描电子显微镜技术进行。从磁化数据来看,所研究的样品显示出顺磁性到铁磁性的转变,随后在低温下呈玻璃态。频率相关的磁化率测量揭示了动态波动,这是由于反铁磁畴钉扎效应之间的相互作用引起的动态波动,从而引起了所研究样品的玻璃态行为。电阻率测量表明所研究样品在测得的温度范围(100-300 K)中具有半导体行为。我们的研究表明,T≤(θ_D/ 2,德拜温度)的电阻率数据遵循幂律,而T>θ_D/ 2 Shklovskii-Efros变程跳变传输机制符合电阻率数据。已经研究了MR%与磁场的关系,以了解样品中存在的T = 100 K附近FM的同时行为和绝缘性。

著录项

  • 来源
    《Materials Science and Engineering》 |2016年第7期|75-86|共12页
  • 作者单位

    Department of Physics, Maharaja Institute of Technology-Mysore, Karnataka 571438, India,Recognised Research Center, Visvesvaraya Technological University, Belgaum, Karnataka 590014, India;

    Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA,Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Virginia 2328, USA;

    Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, West Bengal 721302, India;

    Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, West Bengal 721302, India;

    Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA;

    Department of Physics, Maharaja Institute of Technology-Mysore, Karnataka 571438, India,Recognised Research Center, Visvesvaraya Technological University, Belgaum, Karnataka 590014, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ga substitution; ZFC and FC magnetization; Critical scaling analysis; AC susceptibility; Electrical transport mechanism; Magnetoresistivity;

    机译:Ga取代;ZFC和FC磁化强度;临界尺度分析;AC敏感性电动输送机构;磁阻;

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