Effect of scratching speed on phase transformations in high-speed scratching of monocrystalline silicon

摘要

This paper investigates the phase transformation of (100) monocrystalline silicon in high-speed scratching tests. Various phase transformations of silicon are detected using micro-Raman spectroscopy over a wide range of speeds from 1 mm/min to 25 m/s. Wurtzite silicon (Si-IV) phase with strong Raman intensity is observed in all scratches. The Raman intensity ratio of amorphous silicon to Si-IV in the scratched groove center increases exponentially beyond a scratching speed of 105 mm/min, resulting in a decreased residual scratched depth. The tests provide a basic understanding of the effect of scratching speed on the phase transformation of silicon.