Preparation and characterization of Ba_2TiSi_2O_8 ferroelectric films produced by sol-gel method

摘要

Fresnoite (Ba_2TiSi_2O_8, BTS) thin films were grown on polished Si(l00) substrates by sol-gel method. The films were characterized using Fourier transform infrared spectroscopy (FTIR), Raman scattering spectroscopy, X-ray diffraction (XRD) and atom force microscopy (AFM). The results reveal that the crystallinity of fresnoite thin films increases and their structures become more compact as post-annealing temperature increases. Combined with XRD data, the strong FTIR peaks and Raman bands assigned to Ti-O and Si-O vibration indicate the formation of fresnoite phase in the films at a temperature of 750 deg C. Besides, the AFM observation showed the firms have a smooth surface, fine grains and dense structure.