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首页> 外文期刊>Materials Letters >Synthesis of Ti_3SiC_2 by pressureless sintering of the elemental powders in vacuum
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Synthesis of Ti_3SiC_2 by pressureless sintering of the elemental powders in vacuum

机译:真空中元素粉末的无压烧结合成Ti_3SiC_2

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摘要

Green compacts fabricated from Ti, Si and C powders with molar ratio of 3:1:2 were pressureless sintered at 1340 deg C to 1750 deg C for 20-180 min in vacuum. X-ray diffraction (XRD) was applied to determine the phase compositions of the products. It was found that Ti_3SiC_2 was obtained in most cases. TiC is the most common impurity, while TiSi_2 and Ti_5Si_3 will occur, respectively, if the compacts are sintered at excessively high or low temperatures. Besides the reaction thermodynamics and kinetics, loss of Si and contamination of C may be the most important reasons for the appearance of the impurities. Sintering at 1450 deg C for 120 min yields samples containing 81 vol. percent Ti_3SiC_2. The purity of Ti_3SiC_2 in the products is hopefully increased if the molar ratio of the elemental powders were optimized.
机译:将摩尔比为3:1:2的Ti,Si和C粉末制成的生坯在真空中于1340摄氏度至1750摄氏度进行无压烧结20-180分钟。应用X射线衍射(XRD)确定产物的相组成。发现大多数情况下获得Ti_3SiC_2。 TiC是最常见的杂质,如果压块在过高或过低的温度下烧结,则分别会出现TiSi_2和Ti_5Si_3。除了反应热力学和动力学以外,Si的损失和C的污染可能是杂质出现的最重要原因。在1450摄氏度下烧结120分钟,得到的样品中含有81 vol。 Ti_3SiC_2百分比。如果优化元素粉末的摩尔比,有望提高产品中Ti_3SiC_2的纯度。

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