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Synthesis of cobalt nanoparticles by DC magnetron sputtering and the effects of electron bombardment

机译:直流磁控溅射合成钴纳米粒子及其电子轰击作用

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Dispersive cobalt nanoparticles are fabricated during deposition on SiO_2/Si (001) substrates by direct current (DC) magnetron sputtering at room temperature. It is found that Co nanoparticles ranging from a few nanometers to some tens of nanometers in diameter can be fabricated by applying positive substrate biases. Larger polycrystalline cobalt nanoparticles are formed by the coalescence from smaller single-crystalline ones which may exist in fcc or hcp phase. Size reduction and uniformity of the nanoparticle array can be further enhanced by applying larger positive biases due to electron charging effects. Under the charging effects, the growth kinetics can be altered from VW to SK-like growth mode.
机译:在室温下通过直流(DC)磁控溅射在SiO_2 / Si(001)衬底上沉积过程中制备了分散钴纳米颗粒。已经发现,可以通过施加正的衬底偏压来制造直径范围从几纳米到几十纳米的Co纳米颗粒。较大的多晶钴纳米颗粒是由可能以fcc或hcp相存在的较小单晶颗粒通过聚结形成的。通过施加由于电子充电效应而产生的较大的正偏压,可以进一步增强纳米颗粒阵列的尺寸减小和均匀性。在充电效应下,生长动力学可以从大众改变为类SK的生长模式。

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