Transparent conductive Tb-doped ZnO films prepared by rf reactive magnetron sputtering

摘要

Terbium-doped Zinc oxide (ZnO: Tb) films were prepared by rf reactive magnetron sputtering using a Zn target with some Tb-chips attached. The structural, electrical, and optical properties of the films were investigated by X-ray diffraction (XRD), Hall measurement and optical spectroscopy, respectively. The resistivity of 9.34 x 10~4 ft cm was obtained in ZnO:Tb films prepared on a Si substrate at a temperature of 250 deg C with a Tb content of 4.1 percent. The transparent edges of the films showed blue-shifts with the average transmittance within the visible range being up to 85 percent. The results to date demonstrate that Tb-doped ZnO films are high-quality transparent conductive oxide materials.