Interfacial reactions in 3D-SiC network reinforced Cu-matrix composites prepared by squeeze casting

摘要

Copper matrix composites reinforced with 3D-silicon carbide network were prepared by squeeze casting process at 1150 deg C. The interfacial reaction during preparation was studied by means of energy-dispersive X-ray spectroscopy analyzer (XEDS) attached to scanning electron microscope (SEM), X-ray diffractometry (XRD), transmission electron microscope (TEM) and analytical electron microscope (AEM). This study revealed that silicon in the 3D-SiC network reacted with copper producing Cu_3Si, while SiC itself did not react with copper under the experiment conditions. The shape of present Cu_3Si was mainly lathy distribution in the composites and some cracks were found in it. Avoiding remnants silicon of the 3D-SiC network could prevent from the reaction of Cu_3Si.