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Synthesis Of Znga_2o_4 Nanowires With β-ga_2o_3 Templates And Its Photoluminescence Performance

机译:β-ga_2o_3模板合成Znga_2o_4纳米线及其光致发光性能

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This paper focuses on a new but much simple approach in synthesizing cubic spinel-structure ZnGa_2O_4 nanowires through the reaction of β-Ga_2O_3 nanowires templates and ZnO vapor at high temperature. Characterization has been achieved by means of X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The length of as-synthesized ZnGa_2O_4 nanowires is scaled over 10 μm and the diameter is 80 nm respectively. It has been noticed that the concentration of ZnO vapor plays an important role for synthesizing ZnGa_2O_4 nanowires. And with different concentration of ZnO vapor, the very nanowires could be compounded in the form of β-Ga_2O_3:ZnGa_2O_4, ZnGa_2O_4 and ZnO:ZnGa_2O_4. The corresponding photoluminescence emission bands centered at 460 nm, 405 nm and 381 nm have also been observed.
机译:本文着重探讨一种通过β-Ga_2O_3纳米线模板与ZnO蒸气在高温下反应合成立方尖晶石结构ZnGa_2O_4纳米线的新方法。通过X射线衍射,扫描电子显微镜和透射电子显微镜已经实现了表征。合成后的ZnGa_2O_4纳米线的长度定标为10μm,直径分别为80 nm。已经注意到,ZnO蒸气的浓度对于合成ZnGa_2O_4纳米线起着重要的作用。并且在不同浓度的ZnO蒸气的情况下,可以以β-Ga_2O_3:ZnGa_2O_4,ZnGa_2O_4和ZnO:ZnGa_2O_4的形式复合纳米线。还已经观察到以460nm,405nm和381nm为中心的相应的光致发光发射带。

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