Structural and electrical properties of transparent conducting Al_2O_3-doped ZnO thin films using off-axis DC magnetron sputtering

摘要

Structural and electrical properties of off-axis DC magnetron sputtered Al_2O_3-doped ZnO (AZO) films were systematically investigated as a function of deposition distance from the center. With increasing distance, the AZO films showed an enhanced crystallinity and a denser microstructure with a smooth surface. The AZO film sputtered at the edge of the deposition stage ( ~ 6 cm away from the center) showed the highest mobility (~ 10.1 cm~2/Vs) and the lowest resistivity (~2 × 10~(-3) Ωcm) due to the high plasma and thermal power density, which was suitable for transparent conducting oxide applications.