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AgV7O18: A new silver vanadate semiconductor with photodegradation ability on dyes under visible-light irradiation

机译:AgV7O18:一种新型的钒酸银半导体,在可见光照射下对染料具有光降解能力

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摘要

A new silver vanadate semiconductor AgV7O18 was prepared via the hydrothermal synthesis method. The sample crystallized in typical nanorods with a big length/diameter ratio and large specific surface area. The detailed band structures were reported. AgV7O18 nanorods have small band energy of 1.837 eV with indirect allowed electronic transitions. The narrowed band-gap is due to the hybridization between the Ag-d and O-p states in the valence band. The photocatalysis was investigated by photo-degradation of Rhodamine-B (RhB) irradiated by visible light. AgV7O18 has efficient photodegradation on RhB. The photocatalysis was discussed according to the band energy positions and the trapping experiments. (C)0 2016 Elsevier B.V. All rights reserved.
机译:通过水热合成法制备了一种新的钒酸银半导体AgV7O18。样品在典型的纳米棒中结晶,该纳米棒的长径比大,比表面积大。报告了详细的能带结构。 AgV7O18纳米棒具有1.837 eV的小带能,具有间接允许的电子跃迁。带隙变窄是由于价带中Ag-d和O-p状态之间的杂化。通过可见光照射的若丹明-B(RhB)的光降解研究了光催化作用。 AgV7O18在RhB上具有有效的光降解能力。根据能带位置和俘获实验讨论了光催化作用。 (C)0 2016 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2016年第15期|82-85|共4页
  • 作者单位

    Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China|Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China;

    Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China|Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China;

    Shandong Univ Sci & Technol, Sch Mat Sci & Engn, Qingdao 266590, Peoples R China;

    Dong Eui Univ, Elect Ceram Ctr, Busan 614714, South Korea;

    Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China|Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Semiconductors; Nanocrystalline materials; Optical materials and properties; Photocatalysis; Electronic band structure;

    机译:半导体;纳米晶体材料;光学材料和性能;光催化;电子能带结构;

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