Enhanced photodetection of perovskite nanoplatelet devices by vertically stacked PEDOT: PSS/PbS/CsPbCl_3 architecture

摘要

Vertically stacked PEDOT: PSS/PbS/CsPbCl3 phototransistors were fabricated by a low-temperature solution method, the electrical and optoelectrical properties were investaged. The photodetectors based on PEDOT: PSS/PbS/CsPbCl3 phototransistors exhibited a high responsivity of 147.35 A/W, detectivity of 6.77 x 10(12) Jones, and signal-to-noise ratio of 10(2) under a relatively low external bias. The results indicate vertically stacked PEDOT: PSS/PbS/CsPbCl3 architecture is a promising candidate for high-performance broadband photodetection and portable low-voltage optoelectronic devices. (C) 2021 Elsevier B.V. All rights reserved.