Ultraviolet-Visible-Near-infrared photodetector based on exfoliated Tungsten Selenide

摘要

Two-dimensional transition metal dichalcogenides (TMDs) have been proven to possess many properties benefit for application to photodetectors such as high carrier mobility, wide range band gaps which is ideal for ultraviolet to near-infrared spectrum detection and adjustable band structure related to the number of layers, etc. In this regard, a photodetector based on two-dimensional exfoliated tungsten selenide (WSe2) is prepared. The device exhibits stable and broadband photo response in the range of 375-1064 nm Ultraviolet-Visible-Near-infrared (UV-Vis-NIR), a short response time of 120 ms, high responsivity and detectivity of 8.573 A W-1 and 1.210 x 10(10) Jones, respectively. The measurements are conducted at a low bias voltage of 2 V, and energy consumption is relatively small. We believe that this work of a WSe2 photodetector proves it a kind of TMDs having potential in the future. (C) 2020 Published by Elsevier B.V.