Catalyst-free chemical vapor deposition of Ge wires from readily available precursors

摘要

The present study aimed to grow Ge wires without using a catalyst by chemical vapor deposition technique from readily available precursors, solid GeO2 and liquid ethanol. The growth species (possibly GeO) was in-situ generated by the reactions between solid GeO2 and ethanol decomposition products at 1200 K. Ge wires were grown at the edge of a Si (100) substrate at 900 K from the reactive species carried by Argon flow. The growth of wires was discussed in terms of reduction reactions, supersaturation, and boundary layer theory. (C) 2020 Elsevier B.V. All rights reserved.