A Perspective on Indium Oxide Based Diluted Magnetic Semiconductors

摘要

The prospect of using electron spins in addition to charge, in the field of Information Technology, has shaped ample zeal for a novel arena of electronics prevalently recognized as "spintronics." The profoundly studied methodologies in obtaining spin-polarized carriers for storage devicesreveals the use of diluted magnetic semiconductor (DMS) formed by contaminating very small quantity of 3d transition metal (TM) elements such as Mn, Fe, Co, Cr, etc. having a net spin into the host such as ZnO, ZnS, In2O3, SnO2, TiO2 etc.The TM ions are the utmost remarkable doping elements as they yield deep levels in the gap region to offer a sustainable means of tuning optical, electrical and magnetic properties including both reasonable conductivity and roomtemperature ferromagnetism (RTFM). In2O3is extremely encouraging and key innovative material for a wide assortment of cutting edge spintronics applications because of the multi-versatile properties such as n-type semiconductor, optoelectronic, piezoelectricity, magnetic, multiferroic etc. The objective of this paper is toextend the understanding of key issues in the recent research advancement of In2O3 based DMS specimens doped with various TMs such as Cr, Ni, Mn, Co, Fe, etc.