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Vapour transport and inner walls covering in large aspect ratio macropores

机译:大长径比大孔的蒸汽传输和内壁覆盖

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摘要

A model for the covering of the inner surfaces of narrow and large aspect ratio tubes is developed. It considers diffusive vapour transport toward the bottom of the tubes and self-regulated adsorption at their walls. According to the growth conditions and the tubes geometry, Knudsen diffusion approximation is used. Pressure and coverage profiles, calculated for different geometries and sticking coefficients, allowed discriminating two well defined regimes. In these regimes, surface reaction or vapour diffusion are the corresponding limiting processes; then, a simple equation to estimate the walls covering time as a function of the growth parameters and tubes geometry is proposed. This model allowed revealing the main features guiding the deposition of CdSe semiconductor within commercial alumina membranes by the Isothermal Close Space Sublimation technique.
机译:建立了一个用于覆盖宽窄比大的长管的内表面的模型。它考虑了扩散蒸汽向管子底部的传输以及在管壁处的自调节吸附。根据生长条件和管的几何形状,使用克努森扩散近似。针对不同的几何形状和粘着系数计算出的压力和覆盖率曲线可以区分两种定义明确的方案。在这些情况下,表面反应或蒸汽扩散是相应的限制过程;然后,提出了一个简单的方程式来估算覆盖时间与生长参数和管几何形状有关的时间。该模型可以揭示通过等温近空间升华技术指导CdSe半导体在商业氧化铝膜内沉积的主要特征。

著录项

  • 来源
    《Materials Chemistry and Physics》 |2012年第3期|954-960|共7页
  • 作者单位

    Physics Faculty - IMRE, University of Havana, 10400 La Habana, Cuba,Applied Physics Department, Faculty of Science, Autonoma University of Madrid, Cantoblanco 28049, Madrid, Spain;

    Physics Faculty - IMRE, University of Havana, 10400 La Habana, Cuba,Applied Physics Department, Faculty of Science, Autonoma University of Madrid, Cantoblanco 28049, Madrid, Spain;

    Applied Physics Department, Faculty of Science, Autonoma University of Madrid, Cantoblanco 28049, Madrid, Spain,Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Cantoblanco 28049, Madrid, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A. Semiconductors; B. Vapour deposition; C. Computer modelling and simulation; D. Adsorption;

    机译:A.半导体蒸气沉积;C.计算机建模与仿真;D.吸附;

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