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首页> 外文期刊>The Korean journal of chemical engineering >Cu seed layer damage caused by insoluble anode in Cu electrodeposition
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Cu seed layer damage caused by insoluble anode in Cu electrodeposition

机译:电沉积中不溶性阳极导致的铜晶种层损坏

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摘要

We verified that a Cu seed layer could be damaged by a Pt insoluble anode in Cu electrodeposition. When the Cu seed layer was connected to the Pt galvanically, it was pitted and became resistive. The existence of Pt oxides on the Pt developed a potential with respect to the Cu seed layer, and accompanying electron flow from the Cu seed layer to the Pt insoluble anode. This resulted in the dissolution of the Cu seed layer, and the reduction of Pt oxides, which was confirmed by XPS analysis. The pitting current increased with the oxidation time and the surface area of the Pt, indicating the dissolution current on the Cu seed layer was associated with the Pt oxides on the Pt. This study implies that it is necessary to reduce the Pt anode regularly to prevent the Cu seed damage by the Pt anode in Cu electrodeposition.
机译:我们验证了在铜电沉积过程中,Pt不溶性阳极会损坏Cu晶种层。当Cu籽晶层通过电连接到Pt时,它被点蚀并变成电阻性。 Pt上Pt氧化物的存在产生了相对于Cu晶种层的电势,并且伴随着电子从Cu晶种层流向Pt不溶性阳极。这导致了铜晶种层的溶解和Pt氧化物的减少,这通过XPS分析得到了证实。点蚀电流随氧化时间和Pt表面积的增加而增加,表明Cu晶种层上的溶解电流与Pt上的Pt氧化物有关。这项研究表明,有必要定期减少Pt阳极,以防止Cu电沉积中Pt阳极对Cu晶种的损害。

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