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Fatigue Crack Growth in Self-Reinforced Silicon Nitride Based Materials

机译:自增强氮化硅基材料的疲劳裂纹扩展

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Fatigue crack growth has been studied in two self reinforced silicon nitride based materials (Sm- SiAlON and GPS Si_3N_4) using indentation flexure method in four-point bending mode at room temperature under static and cyclic conditions. The method is simple, cost-effective, material and time saving and produces stable crack growth. However, the analysis requires the estimation of the residual stress intensity factors produced by the indentations and assumptions about the shape of the indentation flaws to calculate the applied stress intensity factors. It was found that crack growth resistance was lower under cyclic loading. This degradation was particularly dramatic in the case of the Si_3N_4 - the material with higher fracture toughness, which exhibits strong toughening produced by contact shielding. Crack growth parameters were calculated assuming a Paris' power law dependence. The crack growth mechanisms were identified using scanning electron microscope and have been correlated to the results of the fatigue tests.
机译:在室温下,在静态和循环条件下,采用压痕弯曲法在四点弯曲模式下,研究了两种自增强氮化硅基材料(Sm-SiAlON和GPS Si_3N_4)的疲劳裂纹扩展。该方法简单,经济,节省材料和时间,并且产生稳定的裂纹扩展。然而,该分析需要估计由压痕产生的残余应力强度因子以及关于压痕缺陷的形状的假设,以计算所施加的应力强度因子。发现在循环载荷下抗裂纹扩展性较低。在具有较高断裂韧性的Si_3N_4的情况下,这种降解尤为明显,该材料具有通过接触屏蔽产生的强韧性。假定巴黎的幂律依赖性,计算出裂纹扩展参数。使用扫描电子显微镜确定了裂纹扩展机制,并将其与疲劳测试的结果相关联。

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