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Electronic Structures and Chemical Bonding of the Layered Tungsten Borides: an ab initio Calculation

机译:层状钨硼化物的电子结构和化学键合:从头算

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摘要

We have investigated the electronic structures and chemical bonding of four tungsten borides, including two WB_2 compounds with different crystal structures, α-W_2B_5 and ε-WB_(2.5), by ab initio calculations based on density function theory (DFT). The calculated density of state (DOS) shows that all compounds are metallic. The DOS at Fermi level is mainly contributed from 5d states of W atoms. The strong covalent bonds of boron atoms make these compounds stable. Due to a lack of electrons in boron sublattices, weak ionic bonds are generated. The charge density distributions indicate the solid B layers or B polyhedrons are interleaved by the W layers.
机译:通过基于密度泛函理论(DFT)的从头算,我们研究了四种硼化钨的电子结构和化学键合,包括两种具有不同晶体结构的WB_2化合物α-W_2B_5和ε-WB_(2.5)。计算出的状态密度(DOS)表明所有化合物均为金属。费米能级的DOS主要来自W原子的5d状态。硼原子的强共价键使这些化合物稳定。由于硼亚晶格中缺乏电子,因此生成了弱离子键。电荷密度分布表明固体B层或B多面体被W层交错。

著录项

  • 来源
    《Key Engineering Materials》 |2010年第2010期|178-181|共4页
  • 作者单位

    School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;

    rnSchool of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;

    rnState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    rnState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    rnState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electronic structure; Ab initio calculation; WB_2; W_2B_5;

    机译:电子结构从头算起;WB_2;W_2B_5;

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